MIMMG100S060B6N 600v 100a igbt module r o h s c omplia n t fea t ures ultra lo w l o ss gs series module high r u g g e dness high s hort circuit c a p a bilit y positive t e mperatur e coe f ficient in tegra ted ga te resi sto r applica t ions invertor conv ertor w e lder smps and ups inductio n h eatin g absolut e maximum ra tings t c = 25c u n less other w i se specifi e d sy mbol pa rame ter t est condit i o n s v a lues unit igbt v c e s coll ector - emitter v o l t age 600 v v ges gate - emitter v o lt age 20 v t c = 25 c 130 a i c dc col l ector c u rrent t c = 70 c 100 a t c = 25c, t p = 1 ms 260 a i c pul s pulse d col l ect o r curre nt t c = 70c, t p = 1 ms 200 a p t o t po w e r diss i p a tion per igbt 500 w t j junctio n t e mperature r a n g e -40 to +150 c t s t g s t orage t e mpe rature r a n ge -40 to +125 c v iso l insulati on t e s t v o l t age ac, t= 1min 300 0 v free-wheeling diode v rrm rep e titive rev e rse v o l t a g e 600 v t c = 25 c 100 a i f(a v ) a vera ge fo r w a rd curre nt t c = 70 c 70 a i f(rms) rms fo r w a rd current 140 a t j = 45c , t= 10ms, sine 300 a i fsm non-r e p e ti tive surge f o r w a rd c u rre nt t j = 45c, t= 8.3 ms, sine 330 a
MIMMG100S060B6N electrical charact e r ist i cs t c = 25c unl ess other w i se specifi ed sy mbol pa rame ter t est condit i o n s min. t y p. max. unit igbt v ge( t h ) ga te - emitter t h reshold v o l t age v c e = v g e , i c = 4 ma 4.5 5 .5 6.5 v i c = 100a, v g e =15v , t j = 25c 1.7 2 .1 2.5 v v c e (sa t ) collector - emitter saturatio n v o l t age i c = 100a, v g e =15v , t j = 125 c 2.4 2.8 v v c e = 600v , v g e = 0 v , t j = 25c 0.3 ma i c e s coll ector l e a k age c u rrent v c e = 600v , v g e = 0 v , t j = 125c 0.5 ma i ges gate leak age current v c e = 0 v , v g e = 20v -0 .3 0 .3 a r g int in tegrated ga t e resistor 5 7 q g e gate charge v c c = 300 v , i c =100a , v g e = 15v 560 nc c i e s input cap a cit a nce 4.3 n f c oes ou tput cap a c i t ance 0 . 5 n f c r e s revers e t ransfer cap a c i t anc e v c e = 25v , v g e = 0 v , f =1mhz 0 . 4 n f t d ( on) t u rn - on dela y t ime 80 ns t r rise t ime 28 n s t d ( o f f ) t u r n - o f f delay t i m e 190 n s t f fall t i me v c c = 300 v , i c =100a r g =2.2 , v g e = 15v t j = 25c inductive l o ad 30 n s t d ( on) t u rn - on dela y t ime 95 ns t r rise t ime 30 n s t d ( o f f ) t u r n - o f f delay t i m e 200 n s t f fall t i me v c c = 300 v , i c =100a r g =2.2 , v g e = 15v t j = 125c inductive l o ad 35 n s 1 .5 mj e o n t u rn - on s w itc h i n g ener g y 2 mj 2 .3 mj e o f f t u rn - o f f s w i tchin g ener g y v c c = 300 v , i c = 100a t j = 25 c r g =2.2 t j = 125c v g e = 15v t j = 25 c inductive l o ad t j = 125c 3 mj free-wheeling diode i f = 100a , v g e = 0 v , t j = 25c 1.25 1.6 v v f f o r w ard v o l t age i f = 100a , v g e = 0 v , t j = 125c 1.2 v t r r revers e reco ver y t i me 210 ns i rrm max. rev e rse recov e r y curr ent 70 a q r r revers e reco ver y c har ge i f = 100a , v r =300v d i f /d t= -100 0a/ s t j = 125c 8 c thermal and mechanica l charac t eristics sy mbol para mete r t est condit i o n s min. t y p. max. unit r thjc junctio n -to-ca se t hermal r e sist ance per igb t 0.25 k / w r t hjcd junctio n -to-ca se t hermal r e sist ance per inverse d i ode 0.6 k / w t o rque modu le-to-si n k recomme n d e d m6 3 5 n m t o rque modu le electro des recomme n d e d m5 2.5 5 n m w e ight 150 g
MIMMG100S060B6N 210 210 v ce =20v 175 175 140 140 i c (a) v c e (sa t ) v f i gure 1 . t y pic a l output charac teristics t j =125c t j =25c i c (a) 105 105 70 7 0 t j =125c t j =25c 35 3 5 0 0 0 1 1 . 5 2.5 3.5 0 v g e v f i gure 2 . t y pic a l t ransfer char acteristics 1 4 2 4 6 8 10 12 2 3 0.5 12 1 2 1 0 e o n e o f f ( mj ) 10 8 6 4 2 0 30 90 i c a f i gure 3 . s w itc h in g ener g y vs . collector c u rr ent v cc = 300v r g =2 .2 ohm v g e = 15v t j =125c e o n e o f f 210 180 150 120 60 0 4 8 2 0 0 2 4 6 8 10 12 e o n e o f f ( mj ) e o n e o f f r g ohm f i gure 4 . s w itc h i n g ener g y vs. gate resistor 1 4 v cc = 300v i c =100 a v g e = 15v t j =125c t ( n s ) 6 100 0 v cc = 300v i c =100 a v g e =15v t j = 125 c t ( n s ) t d ( o n ) t d ( o f f ) 100 100 0 100 0 20 60 i c a figure 5 . s w itc h in g t i mes vs. coll ector curr e n t v cc = 300v t r t f t d ( o n ) 140 120 100 80 40 10 r g =2 .2 ohm v g e = 15v t j =125c t d ( o f f ) t r t f 1 0 0 2 4 6 8 10 12 r g ohm figure6. s w itc h ing t i mes vs. gate resistor 1 4
MIMMG100S060B6N 25 0 0 100 200 300 400 500 600 v c e v f i gure 10. shor t circuit sa fe opera ti ng are a 700 t c case t e mpera tu re ( c ) f i gure1 1. rate d curre nt vs. t c i c ( a ) t j =150c v g e 15v 0 25 0 75 50 25 125 100 50 7 5 125 100 150 t j =125c t j =25c c ( n f ) v c e v f i gure 8 . t y pic a l cap a c i t anc e s vs. v c e v g e (v) 30 25 20 1 5 q g n c f i gure 7 . ga te char ge char a c teristics 0 0 20 10 15 5 100 200 300 400 500 v g e =0v f=1mh z c ies c res 0.1 1 0 5 1 0 210 v cc = 300v i c =100 a t j =25c 150 0 0 100 300 v c e v f i gure 9 . reve r se biase d sa fe opera ting are a 700 200 400 500 600 t j =150c t c =25c v g e =15v 500 600 250 200 150 100 50 400 300 200 100 i csc ( a ) t j =150c t c =25c v g e =15v t s c 10 s 300 c o e s 1 0 3 5 i c p u l s ( a ) 175 140 105 i f ( a ) 7 0 3 5 0 175 v f v f i gure 12. diode fo r w a rd c h a ra cte ri sti cs 0 3 3.5 2.5 2.0 1 . 5 1. 0 0.5
MIMMG100S060B6N 1 0 - 1 1 0 - 2 1 0 - 3 1 1 0 - 1 1 0 - 2 1 0 - 3 1 0 - 4 1 0 - 4 dut y 0.5 0.2 0.1 0.05 single p ulse 1 0 - 4 1 0 - 4 1 0 - 3 1 0 - 3 1 0 - 2 1 0 - 2 1 0 - 1 1 0 - 1 1 1 dut y 0.5 0.2 0.1 0.05 single p ulse z t hjc ( k/w ) z t hjc ( k/w ) 1 rect a n gul ar pulse d u ratio n (secon ds) f i gure 14. t ransient t hermal imped ance of diod e rect a n gul ar pulse d u ratio n (secon ds) f i gure 13. t ransient t hermal imped ance of igbt 7 f i gure 15. circ u i t dia gram 5 6 4 3 2 1 30.5 dimens i o ns in mm f i gure 16. pack age outli nes 94.0 4 5 2 3 7 6 1 2 .8 x 0 .5 4.5 4.5 6.5 17.0 34.0 8.5 29.5 m5 80.0 17.0 23.0 23.0 23.0
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